TK20J60U(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO3P

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	TK20J60U(F)

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1470 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage TK20J60U(F)	MOSFET (Metal Oxide)	20 A	Through Hole	1470 pF	TO-3P(N)	190 mOhm	150 °C	600 V	27 nC	N-Channel	SC-65-3 TO-3P-3	30 V	190 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 20A (Ta) 190W (Tc) Through Hole TO-3P(N)

Technical documentation and resources