PMT560ENEAX

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Nexperia USA Inc.

TRANS MOSFET N-CH 100V 1.1A 4-PIN(3+TAB) SC-73 T/R AUTOMOTIVE AEC-Q101

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PMT560ENEAX

Active

Nexperia USA Inc.

TRANS MOSFET N-CH 100V 1.1A 4-PIN(3+TAB) SC-73 T/R AUTOMOTIVE AEC-Q101

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMT560ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMT560ENEAX

Current - Continuous Drain (Id) (Ta)	1.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	4.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	112 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SOT-223
Power Dissipation (Max)	750 mW
Qualification	AEC-Q101
Rds On (Max)	715 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

PMT560ENEA Series

Part	Grade	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Qualification	Rds On (Max)	Package / Case	Gate Charge (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package Name	Mounting Type	Technology	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Vgs (Max)
Nexperia USA Inc. PMT560ENEAX	Automotive	2.7 V	10 V	4.5 V	AEC-Q101	715 mOhm	TO-261-4 TO-261AA	4.4 nC	N-Channel	-55 °C	150 °C	100 V	112 pF	SOT-223	Surface Mount	MOSFET (Metal Oxide)	1.1 A	750 mW	20 V