Specification	SI4168DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	44 nC, 44 nC
Input Capacitance (Ciss) (Max)	1720 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W, 5.7 W
Rds On (Max)	5.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI4168 Series

Part	Gate Charge (Max)	FET Type	Rds On (Max)	Package Length	Package Name	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)
Vishay Dale SI4168DY-T1-GE3	44 nC 44 nC	N-Channel	5.7 mOhm	0.154 in	8-SOIC	3.9 mm	-55 °C	150 °C	2.5 W 5.7 W	MOSFET (Metal Oxide)	20 V	1720 pF	Surface Mount	24 A	30 V	10 V	4.5 V	3 V

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