Specification	IPD320N20N3GBTMA1

Current - Continuous Drain (Id) (Tc)	34 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	29 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	136 W
Rds On (Max)	32 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPD320N Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Name	Rds On (Max)	Power Dissipation (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Technology
INFINEON IPD320N20N3GBTMA1	-55 °C	175 °C	4 V	PG-TO252-3	32 mOhm	136 W	29 nC	10 V	N-Channel	20 V	34 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 V	Surface Mount	MOSFET (Metal Oxide)

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