STI11NM60ND

Obsolete

STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI11NM60ND

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	90 W
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Vgs (Max)	Mounting Type	Technology	Operating Temperature	Drain to Source Voltage (Vdss)
STMicroelectronics STI11NM60ND	N-Channel	10 A	10 V	5 V	90 W	30 nC	850 pF	I2PAK TO-262-3 Long Leads TO-262AA	I2PAK	25 V	Through Hole	MOSFET (Metal Oxide)	150 °C	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK

Technical documentation and resources