M0358WC120

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IXYS

DIODE GEN PURP 1.2KV 358A W1

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IXYS

DIODE GEN PURP 1.2KV 358A W1

Technical Specifications

Parameters and characteristics for this part

Specification	M0358WC120

Current - Reverse Leakage @ Vr	20 mA
Mounting Type	Clamp On
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AB, A-PUK
Reverse Recovery Time (trr)	1.4 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	W1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Speed	Speed	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
IXYS M0358WC120	Standard Recovery >500ns	200 mA	W1	A-PUK DO-200AB	1.4 µs	Standard	1.2 kV	Clamp On	125 °C	-40 °C	2.1 V	20 mA
IXYS M0358WC180	Standard Recovery >500ns	200 mA	W1	A-PUK DO-200AB	1.4 µs	Standard	1800 V	Clamp On	125 °C	-40 °C	2.1 V	20 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	24	$ 72.49

General part information

Diode 1200 V 358A Clamp On W1

Technical documentation and resources

No documents available