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PSMN7R2-100YSFX

PSMN7R2-100YSFX

Active
Nexperia USA Inc.

NEXTPOWER 100 V, 6.9 MOHM N-CHANNEL MOSFET IN LFPAK56 PACKAGE

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PSMN7R2-100YSFX

PSMN7R2-100YSFX

Active
Nexperia USA Inc.

NEXTPOWER 100 V, 6.9 MOHM N-CHANNEL MOSFET IN LFPAK56 PACKAGE

Find alt

Description

General part information

PSMN7R2-100YSF Series

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN7R2-100YSFX
Current - Continuous Drain (Id) (Tc)111 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)75 nC
Input Capacitance (Ciss) (Max)4818 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-669, SC-100
Package NameLFPAK56, Power-SO8
Power Dissipation (Max)194 W
Rds On (Max)6.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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