Specification	IRF9610SPBF

Current - Continuous Drain (Id) (Tc)	1.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	170 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	20 W, 3 W
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9610 Series

Part	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Rds On (Max)	Vgs (Max)	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)
Vishay Dale IRF9610STRR	4 V	200 V	3 W 20 W	Surface Mount	11 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	3 Ohm	20 V	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	TO-263 (D2PAK)	1.8 A	170 pF
Vishay Dale IRF9610SPBF	4 V	200 V	3 W 20 W	Surface Mount	11 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	3 Ohm	20 V	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	TO-263 (D2PAK)	1.8 A	170 pF
Vishay Dale IRF9610S	4 V	200 V	3 W 20 W	Surface Mount	11 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	3 Ohm	20 V	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	TO-263 (D2PAK)	1.8 A	170 pF
Vishay Dale IRF9610PBF	4 V	200 V	20 W	Through Hole	11 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	3 Ohm	20 V	P-Channel	TO-220-3	10 V	TO-220AB	1.8 A	170 pF
Vishay Dale IRF9610PBF-BE3	4 V	200 V	20 W	Through Hole	11 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	3 Ohm	20 V	P-Channel	TO-220-3		TO-220AB	1.8 A	170 pF

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