Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | ADP46075W3 | ADP46075W3 Series |
|---|---|---|
| - | - | |
| Configuration | 6 N-Channel | 6 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 485 A | 485 A |
| Drain to Source Voltage (Vdss) | 750 V | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 984 nC | 984 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 27050 pF | 27050 pF |
| Mounting Type | Chassis Mount | Chassis Mount |
| Operating Temperature [Max] | 175 °C | 175 °C |
| Operating Temperature [Min] | -40 C | -40 C |
| Package / Case | Module | Module |
| Power - Max [Max] | 704 W | 704 W |
| Rds On (Max) @ Id, Vgs | 2.05 mOhm | 2.05 mOhm |
| Supplier Device Package | ACEPACK | ACEPACK |
| Technology | Silicon Carbide (SiC) | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4 V | 4.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
ADP46075W3 Series
Automotive-grade ACEPACK DRIVE power module, sixpack topology 750 V, 1.6 mOhm typ. SiC MOSFET gen.3 based
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Package / Case | Mounting Type | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics ADP46075W3 | ||||||||||||||
STMicroelectronics ADP46075W3 | ||||||||||||||
STMicroelectronics ADP46075W3 | ||||||||||||||
STMicroelectronics ADP46075W3 | 2.05 mOhm | 485 A | 750 V | ACEPACK | -40 C | 175 °C | Silicon Carbide (SiC) | 984 nC | 704 W | Module | Chassis Mount | 6 N-Channel | 27050 pF | 4.4 V |
Description
General part information
ADP46075W3 Series
The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rdgeneration, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification working mode. This will ensure superb efficiency in final application, saving battery recharging cycles.
A copper base plate with pin-fin base structure make direct fluid cooling available for this power module minimizing thermal resistance.
A dedicated pin-out has been developed to get the best switching performances and press-fit pins will ensure optimal connection with driving board.
Documents
Technical documentation and resources