GAN039-650NTBJ

Active

Nexperia USA Inc.

650 V, 33 MOHM GALLIUM NITRIDE (GAN) FET IN A CCPAK1212I PACKAGE

Find alt

Alpha

GAN039-650NTBJ

Active

Nexperia USA Inc.

650 V, 33 MOHM GALLIUM NITRIDE (GAN) FET IN A CCPAK1212I PACKAGE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

GAN039-650NTB Series

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Technical Specifications

Parameters and characteristics for this part

Specification	GAN039-650NTBJ

Current - Continuous Drain (Id) (Ta)	58.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	26 nC
Input Capacitance (Ciss) (Max)	1980 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Features	Exposed Pad
Package Length	0.37 in
Package Name	CCPAK1212i, 12-BESOP
Package Width	9.4 mm
Power Dissipation (Max)	250 W
Rds On (Max)	39 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	20 V
Vgs(th) (Max)	4.6 V

GAN039-650NTB Series

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package Name	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package Features	Package Width	Package Length	Gate Charge (Max)	Mounting Type	Vgs (Max)	FET Type
Nexperia USA Inc. GAN039-650NTBJ	-55 °C	150 °C	58.5 A	10 V	250 W	12-BESOP CCPAK1212i	650 V	GaNFET (Gallium Nitride)	39 mOhm	4.6 V	1980 pF	Exposed Pad	9.4 mm	0.37 in	26 nC	Surface Mount	20 V	N-Channel