TK16E60W5,S1VX
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.23 Ω@10V, TO-220, DTMOSⅣ
TK16E60W5,S1VX
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.23 Ω@10V, TO-220, DTMOSⅣ
Description
General part information
TK16E60W5 Series
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.23 Ω@10V, TO-220, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK16E60W5,S1VX |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 43 nC |
| Input Capacitance (Ciss) (Max) | 1350 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 130 W |
| Rds On (Max) | 230 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
Parasitic Oscillation and Ringing of Power MOSFETs
MOSFET Gate Driver Circuit
Power MOSFET Maximum Ratings
MOSFET Avalanche Ruggedness
Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
Impacts of the dv/dt Rate on MOSFETs
Power MOSFET Thermal Design and Attachment of a Thermal Fin
Parasitic Oscillation and Ringing of Power MOSFETs
Power MOSFET Structure and Characteristics
Power MOSFET Electrical Characteristics
Selection Guide 2024 - MOSFETs
TK16E60W5,S1VX | Datasheet
Derating of the MOSFET Safe Operating Area
Resonant Circuits and Soft Switching
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
MOSFET SPICE model grade
MOSFET Self-Turn-On Phenomenon
RC Snubbers for Step-Down Converters
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Avalanche energy calculation
Hints and Tips for Thermal Design part3
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET Secondary Breakdown
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Simplified CFD Model Application Note
TK16E60W5 Data sheet/Japanese
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Motor Control (Vacuum Cleaners)
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Hints and Tips for Thermal Design for Discrete Semiconductor Devices