TPN4R303NL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0043 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
TPN4R303NL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0043 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
Description
General part information
TPN4R303NL Series
12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0043 Ω@10V, TSON Advance, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN4R303NL,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 40 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14.8 nC |
| Input Capacitance (Ciss) (Max) | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.1 mm |
| Package Name | 8-TSON Advance |
| Package Width | 3.1 mm |
| Power Dissipation (Max) | 700 mW, 34 W |
| Rds On (Max) | 4.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TPN4R303NL,L1Q | Datasheet
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET SPICE model grade
Selection Guide MOSFETs 2025 Rev1.0
Electrical Characteristics: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
MOSFET Secondary Breakdown
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Simplified CFD Model Application Note
TPN4R303NL Data sheet/Japanese
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
RC Snubbers for Step-Down Converters
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET Self-Turn-On Phenomenon
Avalanche energy calculation
Derating of the MOSFET Safe Operating Area
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices