Specification	SI2367DS-T1-GE3

Current - Continuous Drain (Id) (Tc)	3.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	561 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	960 mW, 1.7 W
Rds On (Max)	66 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SI2367 Series

Part	FET Type	Vgs(th) (Max)	Technology	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Rds On (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
Vishay Dale SI2367DS-T1-GE3	P-Channel	1 V	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	8 V	3.8 A	20 V	Surface Mount	561 pF	4.5 V	1.8 V	1.7 W 960 mW	66 mOhm	23 nC	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3

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