Specification	SI6466ADQ-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	27 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power Dissipation (Max)	1.05 W
Rds On (Max)	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	450 mV

SI6466 Series

Part	FET Type	Package Length	Package Name	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max)	Rds On (Max)	Gate Charge (Max)	Technology	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI6466ADQ-T1-GE3	N-Channel	0.173 in	8-TSSOP	4.4 mm	-55 °C	150 °C	20 V	8 V	2.5 V	4.5 V	1.05 W	Surface Mount	450 mV	14 mOhm	27 nC	MOSFET (Metal Oxide)	6.8 A
Vishay Dale SI6466ADQ-T1-E3	N-Channel	0.173 in	8-TSSOP	4.4 mm	-55 °C	150 °C	20 V	8 V	2.5 V	4.5 V	1.05 W	Surface Mount	450 mV	14 mOhm	27 nC	MOSFET (Metal Oxide)	6.8 A

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