Specification	SIRC18DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	111 nC
Input Capacitance (Ciss) (Max)	5060 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	54.3 W
Rds On (Max)	1.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIRC18 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	FET Feature	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	FET Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs(th) (Max)	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SIRC18DP-T1-GE3	-55 °C	150 °C	60 A	PowerPAK® SO-8	Schottky Diode (Body)	Surface Mount	-16 V	20 V	N-Channel	5060 pF	1.1 mOhm	2.4 V	MOSFET (Metal Oxide)	30 V	54.3 W	111 nC	PowerPAK® SO-8	10 V	4.5 V

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