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INFINEON ISC007N04NM6ATMA1

ISC017N04NM5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.7 MOHM;

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INFINEON ISC007N04NM6ATMA1

ISC017N04NM5ATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.7 MOHM;

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Description

General part information

ISC017 Series

With the OptiMOSTM5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vthin the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGSratios (CGD/CGSdivider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Technical Specifications

Parameters and characteristics for this part

SpecificationISC017N04NM5ATMA1
Current - Continuous Drain (Id) (Ta)31 A
Current - Continuous Drain (Id) (Tc)193 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)67 nC
Input Capacitance (Ciss) (Max)4800 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8 FL
Power Dissipation (Max)3 W, 115 W
Rds On (Max)1.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.4 V

Pricing

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CAD

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