Specification	SI2314EDS-T1-GE3

Current - Continuous Drain (Id) (Ta)	3.77 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	750 mW
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	950 mV

SI2314 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Vgs(th) (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Technology	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SI2314EDS-T1-E3	-55 °C	150 °C	3.77 A	14 nC	Surface Mount	750 mW	12 V	SC-59 SOT-23-3 TO-236-3	950 mV	N-Channel	20 V	33 mOhm	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	4.5 V	1.8 V
Vishay Dale SI2314EDS-T1-GE3	-55 °C	150 °C	3.77 A	14 nC	Surface Mount	750 mW	12 V	SC-59 SOT-23-3 TO-236-3	950 mV	N-Channel	20 V	33 mOhm	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	4.5 V	1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources