JANTX2N5302
ActiveMicrochip Technology
NPN SILICON HIGH-POWER 60V TO 80V, 20A TO 30A
JANTX2N5302
ActiveMicrochip Technology
NPN SILICON HIGH-POWER 60V TO 80V, 20A TO 30A
Description
General part information
JANTX2N5302-Transistor Series
This specification covers the performance requirements for NPN, silicon, high-power, 2N5302 and 2N5303 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/456.
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N5302 |
|---|---|
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 15 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-3, TO-204AA |
| Package Name | TO-3 (TO-204AA) |
| Power - Max | 5 VA |
| Qualification | 456, MIL-PRF-19500 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources