Specification	SQ4431EY-T1_BE3

Current - Continuous Drain (Id) (Tc)	10.8 A, 10.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	25 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1265 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	6 W
Qualification	AEC-Q101
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQ4431 Series

Part	Rds On (Max)	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Gate Charge (Max)	FET Type	Technology	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Grade	Vgs (Max)	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package Length	Package Width
Vishay Dale SQ4431EY-T1_BE3	30 mOhm	AEC-Q101	-55 °C	175 °C	10 V	4.5 V	10.8 A 10.8 A	Surface Mount	25 nC	P-Channel	MOSFET (Metal Oxide)	2.5 V	30 V	Automotive	20 V	8-SOIC	1265 pF	6 W	0.154 in	3.9 mm

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