
S25FS256SAGBHI200
ActiveFLASH MEMORY, SERIAL NOR, 256 MBIT, 32M X 8BIT, SPI, BGA, 24 PINS
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S25FS256SAGBHI200
ActiveFLASH MEMORY, SERIAL NOR, 256 MBIT, 32M X 8BIT, SPI, BGA, 24 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | S25FS256SAGBHI200 |
|---|---|
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Memory Interface | Quad I/O, QPI, SPI |
| Memory Organization | 32 M |
| Memory Size | 256 Gbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24-TBGA |
| Supplier Device Package | 24-BGA |
| Technology | FLASH - NOR |
| Voltage - Supply [Max] | 2 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
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Description
General part information
S25FS256 Series
S25FS256SAGBHI200 is a S25FS256S series non-volatile serial peripheral interface (SPI) flash memory IC using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance and 65-nm process lithography. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The eclipse architecture features a page programming buffer that allows up to 128 words (256bytes) or 256 words (512bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. It offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. This is ideal for code shadowing, XIP, and data storage.
Documents
Technical documentation and resources