Specification	SI8487DB-T1-E1

Current - Continuous Drain (Id) (Ta)	4.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	80 nC, 80 nC
Input Capacitance (Ciss) (Max)	2240 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-UFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	2.7 W, 1.1 W
Rds On (Max)	31 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.2 V

SI8487 Series

Part	Package / Case	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Vgs (Max)	FET Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Technology	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SI8487DB-T1-E1	4-UFBGA	4.9 A	31 mOhm	12 V	P-Channel	1.2 V	10 V	2.5 V	2240 pF	MOSFET (Metal Oxide)	1.1 W 2.7 W	Surface Mount	80 nC 80 nC	4-Microfoot	-55 °C	150 °C	30 V

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