CTS05F40,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 40 V/0.5 A SCHOTTKY BARRIER DIODE, SOD-882(CST2)
CTS05F40,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 40 V/0.5 A SCHOTTKY BARRIER DIODE, SOD-882(CST2)
Description
General part information
CTS05F40 Series
Diodes, 40 V/0.5 A Schottky Barrier Diode, SOD-882(CST2)
Technical Specifications
Parameters and characteristics for this part
| Specification | CTS05F40,L3F |
|---|---|
| Capacitance | 28 pF |
| Current - Average Rectified (Io) | 500 mA |
| Current - Reverse Leakage | 15 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Package / Case | SOD-882 |
| Package Name | CST2 |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) | 810 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
CTS05F40 Data sheet/Japanese
Basics of Diodes (Power Losses and Thermal Design)
Selection Guide Small Signal 2025 Rev1.0
Mini catalog Introduction of Toshiba diode lineup for Industries
Selecting a Schottky Barrier Diode for Voltage Boost Circuits
CTS05F40 Data sheet/English
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
Mini catalog Toshiba's circuit protection solutions and switch solutions
Basics of Diodes (Types and Overview of Diodes)