Specification	PMV100ENEAR

Current - Continuous Drain (Id) (Ta)	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	5.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	160 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	4.5 W, 460 mW
Qualification	AEC-Q101
Rds On (Max)	72 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

PMV100 Series

30 V, N-channel Trench MOSFET

Part	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Qualification	Power Dissipation (Max)	Package / Case	Grade	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)
Nexperia USA Inc. PMV100EPAR	17 nC	3.2 V	P-Channel	616 pF	10 V	4.5 V	TO-236AB	Surface Mount	MOSFET (Metal Oxide)	60 V	AEC-Q101	8.3 W 710 mW	SC-59 SOT-23-3 TO-236-3	Automotive	130 mOhm	2.2 A	-55 °C	175 °C	20 V
Nexperia USA Inc. PMV100XPEAR	6 nC	1.25 V	P-Channel	386 pF	4.5 V	2.5 V	TO-236AB	Surface Mount	MOSFET (Metal Oxide)	20 V	AEC-Q101	1.9 W 463 mW	SC-59 SOT-23-3 TO-236-3	Automotive	128 mOhm	2.4 A	-55 °C	150 °C	12 V
Nexperia USA Inc. PMV100ENEAR	5.5 nC	2.5 V	N-Channel	160 pF	10 V	4.5 V	TO-236AB	Surface Mount	MOSFET (Metal Oxide)	30 V	AEC-Q101	4.5 W 460 mW	SC-59 SOT-23-3 TO-236-3	Automotive	72 mOhm	3 A	-55 °C	150 °C	20 V