PMV20XNEAR

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Nexperia USA Inc.

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 20V 6.3A 3-PIN TO-236AB T/R

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PMV20XNEAR

Active

Nexperia USA Inc.

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 20V 6.3A 3-PIN TO-236AB T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMV20 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMV20XNEAR

Current - Continuous Drain (Id) (Ta)	6.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	930 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	460 mW, 6.94 W
Qualification	AEC-Q101
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.25 V

PMV20 Series

30 V, N-channel Trench MOSFET

Part	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Qualification	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	FET Type	Mounting Type	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Gate Charge (Max)	Rds On (Max)	Power Dissipation (Max)
Nexperia USA Inc. PMV20XNEAR	Automotive	20 V	12 V	AEC-Q101	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	930 pF	MOSFET (Metal Oxide)	2.5 V	4.5 V	TO-236AB	N-Channel	Surface Mount	6.3 A	1.25 V	15 nC	20 mOhm	6.94 W 460 mW
Nexperia USA Inc. PMV20ENR		30 V	20 V		SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	435 pF	MOSFET (Metal Oxide)	4.5 V	10 V	TO-236AB	N-Channel	Surface Mount	6 A	2 V	10.8 nC	21 mOhm	6.94 W 510 mW
Nexperia USA Inc. PMV20XNER		30 V	12 V		SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	1150 pF	MOSFET (Metal Oxide)	1.8 V	4.5 V	TO-236AB	N-Channel	Surface Mount	5.7 A	900 mV	18.6 nC	23 mOhm	6.94 W 510 mW