Specification	SI7374DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	122 nC, 122 nC
Input Capacitance (Ciss) (Max)	5500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 56 W
Rds On (Max)	5.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.8 V

SI7374 Series

Part	Technology	Vgs(th) (Max)	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Mounting Type	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	FET Type
Vishay Dale SI7374DP-T1-E3	MOSFET (Metal Oxide)	2.8 V	PowerPAK® SO-8	5 W 56 W	-55 °C	150 °C	5.5 mOhm	Surface Mount	PowerPAK® SO-8	10 V	4.5 V	30 V	20 V	24 A	122 nC 122 nC	5500 pF	N-Channel
Vishay Dale SI7374DP-T1-GE3	MOSFET (Metal Oxide)	2.8 V	PowerPAK® SO-8	5 W 56 W	-55 °C	150 °C	5.5 mOhm	Surface Mount	PowerPAK® SO-8	10 V	4.5 V	30 V	20 V	24 A	122 nC 122 nC	5500 pF	N-Channel

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