FMM65-015P

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IXYS

MOSFET 2N-CH 150V 65A I4-PAC

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IXYS

MOSFET 2N-CH 150V 65A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMM65-015P

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)

Part	Drain to Source Voltage (Vdss)	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
IXYS FMM65-015P	150 V	2 N-Channel (Dual)	Through Hole	22 mOhm	230 nC	ISOPLUS i4-PAC™	i4-Pac™-5	MOSFET (Metal Oxide)	-55 °C	175 ░C	65 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 150V 65A Through Hole ISOPLUS i4-PAC™

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