IXCP01N90E

Obsolete

IXYS

MOSFET N-CH 900V 250MA TO220AB

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Obsolete

IXYS

MOSFET N-CH 900V 250MA TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXCP01N90E

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	133 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	80 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology
IXYS IXCP01N90E	Through Hole	7.5 nC	133 pF	40 W	TO-220-3	TO-220-3	N-Channel	5 V	10 V	20 V	-55 °C	150 °C	900 V	80 Ohm	250 mA	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 250mA (Tc) 40W (Tc) Through Hole TO-220-3

Technical documentation and resources