2SK4021(Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4.5A PW-MOLD2

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4.5A PW-MOLD2

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4021(Q)

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	PW-MOLD2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage 2SK4021(Q)	1 Ohm	250 V	3.5 V	20 V	10 V	10 nC	150 °C	20 W	PW-MOLD2	Through Hole	4.5 A	MOSFET (Metal Oxide)	TO-251-3 Stub Leads IPAK	N-Channel	440 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 4.5A (Ta) 20W (Tc) Through Hole PW-MOLD2

Technical documentation and resources