Specification	GES6016 TIN/LEAD

Current - Collector (Ic) (Max)	800 mA
Current - Collector Cutoff (Max)	0.01 µA
DC Current Gain (hFE) (Min)	170
Frequency - Transition	425 MHz
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Package Name	TO-92-3
Power - Max	625 mW
Transistor Type	NPN
Vce Saturation (Max)	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

GES60 Series

Part	Frequency - Transition	Package / Case	Package Name	Power - Max	Operating Temperature (Max)	Operating Temperature (Min)	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	Transistor Type	Mounting Type	Vce Saturation (Max)	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min)
Central Semiconductor Corp GES6016 TIN/LEAD	425 MHz	TO-226-3 TO-92-3 (TO-226AA)	TO-92-3	625 mW	150 °C	-65 °C	60 V	0.01 µA	NPN	Through Hole	500 mV	800 mA	170

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