Specification	SIHG25N40D-E3

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	88 nC
Input Capacitance (Ciss) (Max)	1707 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	278 W
Rds On (Max)	170 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

SIHG25 Series

Part	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	FET Type	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIHG25N40D-E3	TO-247-3	Through Hole	400 V	MOSFET (Metal Oxide)	25 A 25 A	30 V	88 nC	170 mOhm	5 V	278 W	1707 pF	10 V	TO-247AC	N-Channel	-55 °C	150 °C
Vishay Dale SIHG25N50E-GE3	TO-247-3	Through Hole	500 V	MOSFET (Metal Oxide)	26 A	30 V	86 nC	145 mOhm	4 V	250 W	1980 pF	10 V	TO-247AC	N-Channel	-55 °C	150 °C
Vishay Dale SIHG25N40D-GE3	TO-247-3	Through Hole	400 V	MOSFET (Metal Oxide)	25 A 25 A	30 V	88 nC	170 mOhm	5 V	278 W	1707 pF	10 V	TO-247AC	N-Channel	-55 °C	150 °C
Vishay Dale SIHG25N60EFL-GE3	TO-247-3	Through Hole	600 V	MOSFET (Metal Oxide)	25 A 25 A	30 V	75 nC	146 mOhm	5 V	250 W	2274 pF	10 V	TO-247AC	N-Channel	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources