Description
General part information
BSC070 Series
ThisOptiMOS™ 5 100V power MOSFET in logic levelreduces switching losses through a low gate charge without compromising conduction losses. The logic level power MOSFET comes in a SuperSO8 package and supports operations at high switching frequencies. In addition, it also provides a low gate threshold voltage which allows the MOSFET to be driven directly from microcontrollers. The OptiMOS™ 5 power MOSFET in logic level is highly suitable forcharger,adapterandtelecomapplications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC070N10LS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 14 A |
| Current - Continuous Drain (Id) (Tc) | 79 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 2700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-7 |
| Power Dissipation (Max) | 2.5 W, 83 W |
| Rds On (Max) | 7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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