PSMN3R3-80YSFX
ActiveNexperia USA Inc.
NEXTPOWER 80 V, 3.1 MOHM, 160 A, N-CHANNEL MOSFET IN LFPAK56 PACKAGE
PSMN3R3-80YSFX
ActiveNexperia USA Inc.
NEXTPOWER 80 V, 3.1 MOHM, 160 A, N-CHANNEL MOSFET IN LFPAK56 PACKAGE
Description
General part information
PSMN3R3-80YSF Series
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN3R3-80YSFX |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 160 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 108 nC |
| Input Capacitance (Ciss) (Max) | 6986 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Package Name | LFPAK56, Power-SO8 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) | 3.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
PSMN3R3-80YSF Quality document
Questions about package outline drawings
Nexperia package poster
plastic, single-ended surface-mounted package; 4 terminals
Wave soldering profile
Cauer mode PSMN3R3-80YSF
Foster model PSMN3R3-80YSF
plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body
Reflow soldering profile
LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation