Specification	SIS472BDN-T1-GE3

Current - Continuous Drain (Id) (Ta)	15.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21.5 nC
Input Capacitance (Ciss) (Max)	1000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.2 W, 19.8 W
Rds On (Max)	7.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIS472 Series

Part	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Package / Case	Mounting Type	Package Name	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)
Vishay Dale SIS472BDN-T1-GE3	2.4 V	-55 °C	150 °C	3.2 W 19.8 W	30 V	MOSFET (Metal Oxide)	N-Channel	7.5 mOhm	10 V	4.5 V	1000 pF	-16 V	20 V	PowerPAK® 1212-8	Surface Mount	PowerPAK® 1212-8	15.3 A	21.5 nC
Vishay Dale SIS472DN-T1-GE3	2.5 V	-55 °C	150 °C	3.5 W 28 W	30 V	MOSFET (Metal Oxide)	N-Channel	8.9 mOhm	10 V	4.5 V	997 pF			PowerPAK® 1212-8	Surface Mount	PowerPAK® 1212-8		30 nC	20 A	20 V

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