Specification	PSMN6R9-100YSFX

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	50.3 nC
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	238 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN6R9 Series

Part	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package / Case	FET Type	Mounting Type	Technology	Operating Temperature
Nexperia USA Inc. PSMN6R9-100YSFX	20 V	LFPAK56 Power-SO8	100 V	50.3 nC	238 W	10 V	100 A	SC-100 SOT-669	N-Channel	Surface Mount	MOSFET (Metal Oxide)	175 °C

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