IPA80R650CEXKSA2

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Infineon Technologies

MOSFET N-CH 800V 8A TO220-3F

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Infineon Technologies

MOSFET N-CH 800V 8A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	IPA80R650CEXKSA2

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	TO-220-3F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)
Infineon Technologies IPA80R650CEXKSA2	45 nC	20 V	MOSFET (Metal Oxide)	N-Channel	650 mOhm	10 V	8 A	3.9 V	TO-220-3 Full Pack	Through Hole	TO-220-3F	33 W	150 °C	-40 °C	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 8A (Ta) 33W (Tc) Through Hole TO-220-3F

Technical documentation and resources

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