AOTF360A70L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 12A TO220F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 12A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF360A70L

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	29.5 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOTF360A70L	29.5 W	20 V	12 A	700 V	MOSFET (Metal Oxide)	22.5 nC	360 mOhm	N-Channel	-55 °C	150 °C	1360 pF	Through Hole	TO-220F	TO-220-3 Full Pack	4 V	10 V

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General part information

N-Channel 700 V 12A (Tj) 29.5W (Tc) Through Hole TO-220F

Technical documentation and resources

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