BAL99E6433HTMA1

Obsolete

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23

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Obsolete

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BAL99E6433HTMA1

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-SOT23
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Speed	Mounting Type	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Infineon Technologies BAL99E6433HTMA1	80 V	1.25 V	1 µA	PG-SOT23	250 mA	Standard	4 ns	200 mA 500 ns	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.5 pF	150 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 250mA Surface Mount PG-SOT23

Technical documentation and resources