IRG4BH20K-LPBF

Obsolete

Infineon Technologies

IGBT 1200V 11A 60W TO262

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 1200V 11A 60W TO262

Technical Specifications

Parameters and characteristics for this part

Specification	IRG4BH20K-LPBF

Current - Collector (Ic) (Max) [Max]	11 A
Current - Collector Pulsed (Icm)	22 A
Gate Charge	28 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power - Max [Max]	60 W
Supplier Device Package	TO-262
Switching Energy	440 µJ, 450 µJ
Td (on/off) @ 25°C	23 ns, 93 ns
Test Condition	960 V, 50 Ohm, 15 V, 5 A
Vce(on) (Max) @ Vge, Ic	4.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Gate Charge	Mounting Type	Test Condition	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Package / Case	Power - Max [Max]	Td (on/off) @ 25°C	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]
Infineon Technologies IRG4BH20K-LPBF	-55 °C	150 °C	4.3 V	TO-262	28 nC	Through Hole	5 A 15 V 50 Ohm 960 V	11 A	22 A	I2PAK TO-262-3 Long Leads TO-262AA	60 W	23 ns 93 ns	440 µJ 450 µJ	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 1200 V 11 A 60 W Through Hole TO-262

Technical documentation and resources