TPAU3J S1G

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Taiwan Semiconductor Corporation

DIODE AVALANCHE 600V 3A TO277A

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Taiwan Semiconductor Corporation

DIODE AVALANCHE 600V 3A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	TPAU3J S1G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	3-PowerDFN, TO-277
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.88 V

Part	Technology	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Capacitance @ Vr, F	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation TPAU3J S1G	Avalanche	3-PowerDFN TO-277	3 A	TO-277A (SMPC)	60 pF	Surface Mount	75 ns	175 ░C	-55 C	10 µA	200 mA 500 ns	1.88 V	600 V
Taiwan Semiconductor Corporation TPAU3G	Avalanche	3-PowerDFN TO-277	3 A	TO-277A (SMPC)	60 pF	Surface Mount	75 ns	175 ░C	-55 C	10 µA	200 mA 500 ns	1.88 V	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Surface Mount TO-277A (SMPC)

Technical documentation and resources

No documents available