ZTX853

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Diodes Inc

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 4 A, 1.2 W, E-LINE, THROUGH HOLE

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ZTX853

Active

Diodes Inc

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 4 A, 1.2 W, E-LINE, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ZTX853

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	130 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3
Power - Max [Max]	1.2 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

ZTX853 Series

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
Diodes Inc ZTX853STOA	130 MHz	200 mV	50 nA	Through Hole	100 V	-55 °C	200 C	NPN	1.2 W	4 A	E-Line-3	100	E-Line (TO-92 compatible)
Diodes Inc ZTX853	130 MHz	200 mV	50 nA	Through Hole	100 V	-55 °C	200 C	NPN	1.2 W	4 A	E-Line-3	100	E-Line (TO-92 compatible)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 1.03
		10	$ 0.84
		100	$ 0.66
		500	$ 0.56
		1000	$ 0.45
		4000	$ 0.43
		8000	$ 0.41
		12000	$ 0.39
Newark	Each	1	$ 0.82
		10	$ 0.81
		100	$ 0.72
		500	$ 0.69
		1000	$ 0.67
		2500	$ 0.64
		12000	$ 0.64

Description

General part information

ZTX853 Series

The ZTX853 is a 100V E-Line Silicon NPN Planar Medium Power High Current Transistor with optimised chip technology to give exceptionally high current capability coupled with very low saturation voltages.