
ZXGD3003E6QTA
ActiveMOSFET DRVR 5A 1-OUT HI SPEED NON-INV 6-PIN SOT-23 EMBOSSED T/R
Deep-Dive with AI
Search across all available documentation for this part.

ZXGD3003E6QTA
ActiveMOSFET DRVR 5A 1-OUT HI SPEED NON-INV 6-PIN SOT-23 EMBOSSED T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXGD3003E6QTA |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) [custom] | 5 A |
| Current - Peak Output (Source, Sink) [custom] | 5 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel MOSFET, IGBT |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-6 |
| Rise / Fall Time (Typ) [custom] | 8.9 ns |
| Rise / Fall Time (Typ) [custom] | 8.9 ns |
| Supplier Device Package | SOT-23-6 |
| Voltage - Supply [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.26 | |
| 10 | $ 0.79 | |||
| 25 | $ 0.66 | |||
| 100 | $ 0.52 | |||
| 250 | $ 0.45 | |||
| 500 | $ 0.41 | |||
| 1000 | $ 0.38 | |||
| Digi-Reel® | 1 | $ 1.26 | ||
| 10 | $ 0.79 | |||
| 25 | $ 0.66 | |||
| 100 | $ 0.52 | |||
| 250 | $ 0.45 | |||
| 500 | $ 0.41 | |||
| 1000 | $ 0.38 | |||
| Tape & Reel (TR) | 3000 | $ 0.33 | ||
| 6000 | $ 0.31 | |||
| 9000 | $ 0.30 | |||
| 15000 | $ 0.29 | |||
| 21000 | $ 0.28 | |||
| 30000 | $ 0.27 | |||
Description
General part information
ZXGD3003E6Q Series
This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It can typically drive 1.5A into the low gate impedance with just 10mA input from a controller. The turn-on and turn-off switching behavior of the MOSFET can be individually tailored to suit an application. By defining the switching characteristics appropriately, EMI and cross conduction can be reduced.
Documents
Technical documentation and resources