IXTP240N055T

Obsolete

IXYS

MOSFET N-CH 55V 240A TO220AB

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Obsolete

IXYS

MOSFET N-CH 55V 240A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP240N055T

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	7600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
IXYS IXTP240N055T	Through Hole	480 W	55 V	4 V	7600 pF	170 nC	MOSFET (Metal Oxide)	240 A	10 V	TO-220-3	3.6 mOhm	N-Channel	20 V	-55 °C	175 ░C	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 240A (Tc) 480W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available