IPD85P04P4L06ATMA1

Obsolete

Infineon Technologies

IPD85P04P4L-06 IS AN AUTOMOTIVE MOSFET OFFERING -40 V, P-CH, 6.4 MΩ MAX, DPAK, OPTIMOS™-P2 FOR HIGH PERFORMANCE IN AUTOMOTIVE APPLICATIONS.

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Obsolete

Infineon Technologies

IPD85P04P4L-06 IS AN AUTOMOTIVE MOSFET OFFERING -40 V, P-CH, 6.4 MΩ MAX, DPAK, OPTIMOS™-P2 FOR HIGH PERFORMANCE IN AUTOMOTIVE APPLICATIONS.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD85P04P4L06ATMA1

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	6580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	88 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6.4 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Grade	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPD85P04P4L06ATMA1	MOSFET (Metal Oxide)	Surface Mount	104 nC	PG-TO252-3-313	85 A	AEC-Q101	P-Channel	6580 pF	88 W	16 V	Automotive	2.2 V	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	6.4 mOhm	4.5 V 10 V
Infineon Technologies IPD85P04P407ATMA1	MOSFET (Metal Oxide)	Surface Mount		PG-TO252-3-313	85 A	AEC-Q101	P-Channel		88 W	20 V	Automotive	4 V	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	7.3 mOhm	10 V	6085 pF	89 nC
Infineon Technologies IPD85P04P407ATMA2	MOSFET (Metal Oxide)	Surface Mount		PG-TO252-3-313	85 A	AEC-Q101	P-Channel		88 W	20 V	Automotive	4 V	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	7.3 mOhm		6085 pF	89 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 40 V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313

Technical documentation and resources