TK20N60W,S1VF

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO247

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	TK20N60W,S1VF

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	165 W
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Mounting Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK20N60W,S1VF	Through Hole	150 °C	1680 pF	TO-247	TO-247-3	MOSFET (Metal Oxide)	600 V	30 V	20 A	N-Channel	165 W	48 nC	10 V	3.7 V
Toshiba Semiconductor and Storage TK20N60W5,S1VF	Through Hole	150 °C	1800 pF	TO-247	TO-247-3	MOSFET (Metal Oxide)	600 V	30 V	20 A	N-Channel	165 W		10 V	4.5 V	55 nC	175 mOhm

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General part information

N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole TO-247

Technical documentation and resources