DMT8012LFG-13

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Diodes Inc

TRANS MOSFET N-CH 80V 9.5A 8-PIN POWERDI EP T/R

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Diodes Inc

TRANS MOSFET N-CH 80V 9.5A 8-PIN POWERDI EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMT8012LFG-13

Current - Continuous Drain (Id) @ 25°C	35 A, 9.5 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1949 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.2 W, 30 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

80V N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMT8012LFG-7	6 V 10 V	N-Channel	POWERDI3333-8	34 nC	1949 pF	MOSFET (Metal Oxide)	8-PowerVDFN	3 V	80 V	20 V	16 mOhm	2.2 W 30 W	-55 °C	150 °C	Surface Mount	9.5 A 35 A
Diodes Inc DMT8012LFG-13	6 V 10 V	N-Channel	POWERDI3333-8	34 nC	1949 pF	MOSFET (Metal Oxide)	8-PowerVDFN	3 V	80 V	20 V	16 mOhm	2.2 W 30 W	-55 °C	150 °C	Surface Mount	9.5 A 35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

80V N-Channel Enhancement Mode MOSFET

Technical documentation and resources