AUIRF1010EZSTRL

Obsolete

Infineon Technologies

MOSFET N-CH 60V 75A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF1010EZSTRL

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds	2810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs [Max]	8.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Package / Case
Infineon Technologies AUIRF1010EZSTRL	10 V	MOSFET (Metal Oxide)	4 V	20 V	60 V	86 nC	140 W	2810 pF	75 A	N-Channel	-55 °C	175 ░C	8.5 mOhm	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies AUIRF1010EZS	10 V	MOSFET (Metal Oxide)	4 V	20 V	60 V	86 nC	140 W	2810 pF	75 A	N-Channel	-55 °C	175 ░C	8.5 mOhm	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 75A (Tc) 140W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources