BSM150GB120DLCHOSA1

Obsolete

Infineon Technologies

IGBT MOD 1200V 300A 1250W

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT MOD 1200V 300A 1250W

Technical Specifications

Parameters and characteristics for this part

Specification	BSM150GB120DLCHOSA1

Configuration	Half Bridge
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	11 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	1250 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Supplier Device Package	Mounting Type	Configuration	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)
Infineon Technologies BSM150GT120DN2BOSA1
Infineon Technologies BSM150GB60DLCHOSA1	500 çA	600 V	Standard	2.45 V	6.5 nF	Module	125 °C	-40 °C	595 W	Module	Chassis Mount	Single	180 A
Infineon Technologies BSM150GB120DLCHOSA1	5 mA	1200 V	Standard	2.6 V	11 nF	Module	125 °C	-40 °C	1250 W	Module	Chassis Mount	Half Bridge
Infineon Technologies BSM150GB170DN2HOSA1			Standard	3.9 V	20 nF	Module			1250 W	Module	Chassis Mount	Half Bridge	220 A	150 °C	1.5 mA	1700 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1200 V 300 A 1250 W Chassis Mount Module

Technical documentation and resources

No documents available