STTA406

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STMicroelectronics

DIODE GEN PURP 600V 4A DO201AD

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STMicroelectronics

DIODE GEN PURP 600V 4A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	STTA406

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction	125 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	55 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

DIODE GEN PURP 600V 4A DO201AD

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction	Supplier Device Package	Reverse Recovery Time (trr)
STMicroelectronics STTA406	4 A	1.75 V	DO-201AD, Axial	600 V	200 mA, 500 ns	Standard	50 µA	Through Hole	125 °C	DO-201AD	55 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 4A Through Hole DO-201AD

Technical documentation and resources

No documents available