APT13003SZTR-G1

Obsolete

Diodes Inc

POWER BIPOLAR TRANSISTOR, 1.3A I(C), NPN

Search across all available documentation for this part.

Obsolete

Diodes Inc

POWER BIPOLAR TRANSISTOR, 1.3A I(C), NPN

Technical Specifications

Parameters and characteristics for this part

Specification	APT13003SZTR-G1

Current - Collector (Ic) (Max) [Max]	1.3 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1.1 W
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max)	450 V

Inactive Datasheet Archive

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Power - Max [Max]	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Grade	Current - Collector Cutoff (Max) [Max]	Qualification
Diodes Inc APT13003SZTR-G1	TO-226-3 TO-92-3	5	450 V	TO-92	1.1 W	Through Hole	NPN	1.2 V	4 MHz	1.3 A	150 °C	-65 °C
Diodes Inc APT13003SU-G1	TO-126-3 TO-225AA	5	450 V	TO-126	20 W	Through Hole	NPN	1.2 V	4 MHz	1.3 A	150 °C	-65 °C
Diodes Inc APT13003HZTR-G1	TO-226-3 TO-92-3	13	465 V	TO-92	1.1 W	Through Hole	NPN		4 MHz	1.5 A	150 °C	-65 °C	400 mV
Diodes Inc APT13003DU-G1	TO-126-3 TO-225AA	5	450 V	TO-126	20 W	Through Hole	NPN		4 MHz	1.5 A	150 °C	-65 °C	400 mV
Diodes Inc APT13003EU-G1	TO-126-3 TO-225AA	13	465 V	TO-126	20 W	Through Hole	NPN		4 MHz	1.5 A	150 °C	-65 °C	400 mV
Diodes Inc APT13003LZTR-G1	TO-226-3 TO-92-3	6 hFE	450 V	TO-92	800 mW	Through Hole	NPN	500 mV		800 mA	150 °C	-55 °C
Diodes Inc APT13003HU-G1	TO-126-3 TO-225AA	13	465 V	TO-126	20 W	Through Hole	NPN		4 MHz	1.5 A	150 °C	-65 °C	400 mV
Diodes Inc APT13003EU-E1	TO-126-3 TO-225AA	15 hFE	465 V	TO-126	1.1 W	Through Hole	NPN		4 MHz	1.5 A	150 °C	-65 °C	400 mV	Automotive	10 µA	AEC-Q101
Diodes Inc APT13003NZTR-G1	TO-226-3 TO-92-3	5	900 V	TO-92	1 W	Through Hole	NPN		4 MHz	1.5 A	150 °C	-55 °C	400 mV
Diodes Inc APT13003EZTR-G1	TO-226-3 TO-92-3	13	465 V	TO-92	1.1 W	Through Hole	NPN		4 MHz	1.5 A	150 °C	-65 °C	400 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Inactive Datasheet Archive

Technical documentation and resources