IXGA12N120A3

Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 12A; 100W; TO263

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Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 12A; 100W; TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXGA12N120A3

Current - Collector (Ic) (Max) [Max]	22 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	20.4 nC
IGBT Type	PT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	100 W
Supplier Device Package	TO-263AA
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector Pulsed (Icm)	Package / Case	IGBT Type	Gate Charge	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Td (on/off) @ 25°C	Switching Energy	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Test Condition	Td (on/off) @ 25°C
IXYS IXGA12N120A3	-55 °C	150 °C	22 A	3 V	100 W	60 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	PT	20.4 nC	TO-263AA	1200 V	Surface Mount
IXYS IXGA12N60B	-55 °C	150 °C	24 A	2.1 V	100 W	48 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		32 nC	TO-263AA	600 V	Surface Mount	20 ns 150 ns	500 µJ
IXYS IXGA12N60CD1	-55 °C	150 °C	24 A	2.7 V	100 W	48 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		32 nC	TO-263AA	600 V	Surface Mount	20 ns	90 µJ	35 ns	60 ns
IXYS IXGA12N100	-55 °C	150 °C	24 A	3.5 V	100 W	48 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		65 nC	TO-263AA	1000 V	Surface Mount					12 A 15 V 120 Ohm 800 V	100 ns 850 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 22 A 100 W Surface Mount TO-263AA

Technical documentation and resources